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Het Wafeltje van het siliciumcarbide
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4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate

Merknaam: ZMSH
Modelnummer: 4 inch SiC Wafer
MOQ: 10 stuks
Verpakking: Gemeenschappelijk pakket
Betalingsvoorwaarden: T/T
Gedetailleerde informatie
Plaats van herkomst:
China
Certificering:
RoHS
Type:
4h-n
Cijfer:
Vervaardiger / Onderzoek / Productieklasse
Dikte:
350 μm±25 μm
Kronkelen:
≤40 μm
Ruwheid:
Ra≤1 nm
Diameter:
4 inch, 99,5 mm ~ 100,0 mm
Productbeschrijving
4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate 4inch 4H-N Type Sic Wafers 350um Thickness SiC Substrate What are Silicon Carbide (SiC) Wafers & Substrates? Silicon Carbide (SiC) wafers and substrates are specialized materials used in semiconductor technology made from silicon carbide, a compound known for its high thermal conductivity, excellent mechanical strength, and wide bandgap. Exceptionally hard and lightweight, SiC wafers and substrates provide a robust