Kort: Follow the narrative to see how small design choices affect everyday performance. In this video, we demonstrate the 6H Silicon Carbide (SiC) Square Substrate Wafer, showcasing its manufacturing process, material advantages, and real-world applications in power and high-frequency devices. You'll learn how its unique properties enable stable operation in extreme conditions and see examples of its use in semiconductor research and device fabrication.
Gerelateerde Productkenmerken:
Manufactured from high-purity 6H-SiC single crystal material for advanced semiconductor applications.
Square shape design for easy handling and streamlined device fabrication processes.
Offers excellent thermal conductivity and high breakdown electric field strength for power devices.
Wide bandgap of 3.0 eV ensures stable performance in high-temperature and high-voltage environments.
Available in polished, semi-polished, or unpolished surfaces with customizable sizes and thicknesses.
High electron mobility supports superior performance in RF and microwave electronic devices.
Ultra-high hardness and chemical resistance provide long service life and reliability.
Suitable for power semiconductor devices, laser systems, and research laboratory applications.
FAQ's:
What is the difference between 6H-SiC and 4H-SiC?
4H-SiC is more commonly used in commercial power devices due to higher electron mobility, while 6H-SiC is preferred in certain RF, microwave, and special optoelectronic applications.
Can you supply unpolished 6H-SiC square substrates?
Yes, we offer polished, lapped, and unpolished surfaces based on customer requirements.
Do you support small-size square substrates?
Yes, square sizes down to 2×2 mm can be customized to meet specific project needs.
Are inspection and test reports available?
Yes, we can provide dimensional inspection reports, resistivity test data, and surface roughness reports upon request.