Name: 4H-SiC-epitaxiale wafers voor MOSFET's met ultrahoge spanning (100×500 μm, 6 inch)
Uploaded: 2026-03-09CDT00:47:59-05:00
Duration: 4 s
Description: Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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4H-SiC-epitaxiale wafers voor MOSFET's met ultrahoge spanning (100×500 μm, 6 inch)

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September 02, 2025

Trefwoord: Het Wafeltje van het siliciumcarbide

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#het substraat van het siliciumcarbide #sic wafeltje #silicium op saffier wafeltjes

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Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.

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